Gated Si field emitter array prepared by using anodization

被引：7

作者：

Higa, K ^{[1
]}

Nishii, K ^{[1
]}

Asano, T ^{[1
]}

机构：

[1] Kyushu Inst Technol, Ctr Microelect Syst, Iizuka, Fukuoka 820, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 02期

关键词：

D O I：

10.1116/1.589875

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High aspect-ratio gated field emitter arrays have been fabricated using silicon tip prepared by the anodization of a silicon wafer with periodic n/p junctions. The tips were formed by the preferential growth of porous silicon in p-type material and were transferred to a separate silicon substrate by direct bonding. Gate electrodes were then formed by depositing a WSi2 film over the tips, and apertures were subsequently coated by etching with an argon milling process. The resulting gated tip arrays demonstrated field emission, although higher than usual gate voltages were required. (C) 1998 American Vacuum Society. [S0734-211X(98)01102-0].

引用

页码：651 / 653

页数：3

共 12 条

[1] A new self-aligned process for fabrication of microemitter arrays using selective etching of silicon [J].

Asano, T ;

Yasuda, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (12B) :6632-6636

[2]

Betsui K., 1991, 4 INT VAC MICR C NAG, P26

[3]

Gray H. F., 1991, International Electron Devices Meeting 1991. Technical Digest (Cat. No.91CH3075-9), P221, DOI 10.1109/IEDM.1991.235462

[4] Single-crystal Si field emitter fabricated by anodization [J].

Higa, K ;

Nishii, K ;

Asano, T .

APPLIED PHYSICS LETTERS, 1997, 71 (07) :983-985

[5] Fabrication of single-crystal Si microstructures by anodization [J].

Higa, K ;

Asano, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (12B) :6648-6651

[6]

HIGA K, 1997, MICR NAN C, P108

[7]

HIGA K, 1997, 10 INT VAC MICR C, P78

[8] SILICON-WAFER DIRECT BONDING WITHOUT HYDROPHILIC NATIVE OXIDES [J].

HIMI, H ;

MATSUI, M ;

FUJINO, S ;

HATTORI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1A) :6-10

[9]

IMAI K, 1983, 15 C SOL STAT DEV MA, P105

[10]

NAKAMOTO M, 1994, 7 INT VAC MICR C, P41

← 1 2 →