Optimization of magnetic parameters for toggle magnetoresistance random access memory

被引：14

作者：

Wang, SY

Fujiwara, H

机构：

[1] Univ Alabama, MINT Ctr, Tuscaloosa, AL 35487 USA

[2] Univ Alabama, Dept Phys & Astron, Tuscaloosa, AL 35487 USA

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2005年 / 286卷

关键词：

toggle-MRAM; operating field margin; synthetic antiferromagnet; thermal stability; exchange coupling strength;

D O I：

10.1016/j.jmmm.2004.09.030

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The magnetic parameters of the synthetic anti ferromagnetic (SAF) elements for toggle-mode magnetoresistance random access memories (Toggle-MRAMs) have been optimized using the critical field curves obtained by analytical method with the aid of numerical calculations, to maximize the operating field margin taking into account the required memory density, storage lifetime, half-select disturb robustness, and the available strength of operating field. The control of especially low-exchange coupling strength in the SAF in addition to the increase of the operating field has been found to be essential for the development of toggle-MRAM in near future. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：27 / 30

页数：4

共 6 条

[1] MAGNETORESISTIVE MEMORY TECHNOLOGY [J].

DAUGHTON, JM .

THIN SOLID FILMS, 1992, 216 (01) :162-168

[2]

ENGEL BN, 2004, 9 JOINT MMM INTERMAG

[3]

FUJIWARA H, IN PRESS T MAG SOC J

[4] Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited) [J].

Parkin, SSP ;

Roche, KP ;

Samant, MG ;

Rice, PM ;

Beyers, RB ;

Scheuerlein, RE ;

O'Sullivan, EJ ;

Brown, SL ;

Bucchigano, J ;

Abraham, DW ;

Lu, Y ;

Rooks, M ;

Trouilloud, PL ;

Wanner, RA ;

Gallagher, WJ .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (08) :5828-5833

[5]

PIETAMBARAM SV, 2004, 9 JOINT MMM INTERMAG

[6]

Savtchenko L., 2003, U.S. Patent, Patent No. 6545906

← 1 →