Comparative study of electroluminescence from Cu(In,Ga)Se2 and Si solar cells

被引:93
作者
Kirchartz, T. [1 ]
Rau, U. [1 ]
Kurth, M. [1 ]
Mattheis, J. [1 ]
Werner, J. H. [1 ]
机构
[1] Univ Stuttgart, IPE, D-70569 Stuttgart, Germany
关键词
luminescence; copper indium gallium diselenide; reciprocity; light emitting diode; donor acceptor pair; quantum efficiency;
D O I
10.1016/j.tsf.2006.12.105
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electroluminescence (EL) of high-efficiency mono-cry stal line silicon solar cells is compared to that of polycrystalline ZnO/CdS/Cu(In,Ga)Se-2 heterojunction solar cells. Both types of devices exhibit a remarkable efficiency as light emitting diodes. The external quantum efficiency Q(LED) defined as the ratio between radiative and total recombination currents is QLED approximate to 0. 13% in case of the silicon cell and QLED approximate to 0.03% for the Cu(In,Ga)Se-2 device. The luminescent emission of Cu(In,Ga)Se-2 changes from a broadened donor-acceptor pair recombination at temperatures T < 140 K to band-to-band recombination for T > 200 K. The emission of the silicon cell is dominated by transverse optical phonon assisted hand-to-hand recombination in the entire temperature range 90 K <= T <= 300 K. The reciprocity between the external (photovoltaic) quantum efficiency Q(c) and the electroluminescent emission of both devices is fulfilled. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:6238 / 6242
页数:5
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