Two successive effects in the interaction of nanocrystalline SnO2 thin films with reducing gases

被引：28

作者：

Safonova, OV

Rumyantseva, MN

Kozlov, RI

Labeau, M

Delabouglise, G

Ryabova, LI

Gaskov, AM ^{[1
]}

机构：

[1] Moscow MV Lomonosov State Univ, Dept Chem, Moscow 119899, Russia

[2] Russian Acad Sci, Inst Crystallog, Moscow 117333, Russia

[3] Inst Natl Polytech Grenoble, CNRS UMR 5628, Mat & Genie Phys Lab, F-38402 St Martin Dheres, France

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 77卷 / 02期

基金：

俄罗斯基础研究基金会;

关键词：

solid gas reactions; in situ electrical measurements; XPS; AES; doping metals;

D O I：

10.1016/S0921-5107(00)00476-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Interaction of pure and doped (Pd. Pt, Cu. Ni) nanocrystalline SnO2 thin films with different reducing gases (H-2, CO, C3H8/C4H10) was studied in a temperature range of 30-400 degrees C in situ by the electrical response processing. Two successive effects of conductance growth were found. It is supposed that the more pronounced second effect may be associated with tin dioxide and doping metal oxides transformations resulting from the consumption of lattice oxygen in redox reactions on the SnO2 grain surface. The variation of the chemical state of elements during annealing in different gas atmospheres was determined by the X-ray Photoelectron Spectroscopy (XPS) method. A special procedure of thin film annealing was proposed to reduce the induction period necessary for the second peak to appear. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：159 / 166

页数：8

共 17 条

[1] OXYGEN VACANCIES AND DEFECT ELECTRONIC STATES ON THE SNO2(110)-1X1 SURFACE [J].