Low polarisation sensitivity electroabsorption modulators for 160Gbit/s networks

被引：13

作者：

Moodie, DG ^{[1
]}

Cannard, PJ ^{[1
]}

Dann, AJ ^{[1
]}

Marcenac, DD ^{[1
]}

Ford, CW ^{[1
]}

Reed, J ^{[1
]}

Moore, RT ^{[1
]}

Lucek, JK ^{[1
]}

Ellis, AD ^{[1
]}

机构：

[1] BT Labs, Ipswich IP5 7RE, Suffolk, England

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 24期

关键词：

electroabsorption modulators; integrated optoelectronics;

D O I：

10.1049/el:19971393

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Packaged low polarisation sensitivity InGaAs/InAlAs MQW electroabsorption modulators employing a novel ridged deeply etched buried heterostructure design are described. The feasibility of using them in 160Gbit/s OTDM systems is experimentally assessed.

引用

页码：2068 / 2070

页数：3

共 3 条

[1] 40 GBIT/S TRANSMISSION OVER 202KM OF STANDARD FIBER USING MIDSPAN SPECTRAL INVERSION [J].