Studies on SiO2-SiO2 bonding with hydrofluoric acid - Room temperature and low stress bonding technique for MEMS

被引:15
作者
Nakanishi, H [1 ]
Nishimoto, T [1 ]
Nakamura, R [1 ]
Yotsumoto, A [1 ]
Shoji, S [1 ]
机构
[1] Shimadzu Co, Technol Res Lab, Kyoto 61902, Japan
来源
MICRO ELECTRO MECHANICAL SYSTEMS - IEEE ELEVENTH ANNUAL INTERNATIONAL WORKSHOP PROCEEDINGS | 1998年
关键词
D O I
10.1109/MEMSYS.1998.659827
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Studies on SiO2-SiO2 bonding with hydrofluoric acid (HF) are described. This method has a remarkable feature that bonding can be obtained at room temperature. Advantages of this method are low thermal damage, low residual stress and simplicity of the bonding process, which are expected for the packaging and assembly of MEMS. The bond characteristics were measured under different bonding conditions of HF concentration, pressure, chemicals and so on. The bond strength depends on the applied pressure during bonding. HF concentration can be reduced to 0.1%. The bonding is also observed using KOH solution in stead of HF. TEM, SIMS, RI and EPMA were applied to evaluate the bonded interface. From the TEM results, an interlayer is formed between SiO2-SiO2. The thickness of the interlayer depends strongly on the applied pressure during bonding. The SIMS results showed that hydrogen and fluorine partially exist in the interlayer. Considering the result of the RI analysis, surplus I-IF solution is squeezed out from the interface as the bonding progress. From these results, both surfaces of the SiO2 are solved by HF and an interlayer, which is a binding layer, is formed. Formation of the interlayer plays a very important role for the characteristics of HF-bonding.
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页码:609 / 614
页数:4
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