A thick-film hydrogen sensor based on a ZnO:MoO3 formulation

被引:14
作者
Dayan, NJ [1 ]
Sainkar, SR
Karekar, RN
Aiyer, RC
机构
[1] Univ Pune, Ctr Adv Studies Mat Sci & Solid State Phys, Dept Phys, Pune 411007, Maharashtra, India
[2] Natl Chem Lab, Pune 411008, Maharashtra, India
关键词
D O I
10.1088/0957-0233/9/3/008
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A highly selective ZnO:MoO3 based thick-film hydrogen sensor has been developed. The surface morphological studies indicate that the average grain size increases with higher amounts of MoO3 in ZnO. It is observed that the sensitivity increases with the grain size. A possible working model for the sensor is postulated. MoO3 was mixed in ZnO in various weight percentages. These mixtures were screen printed on alumina substrate. The sensors operate at an operating temperature of 450 degrees C and their conductance increases linearly with the square root of the concentration of H-2 gas in ambient air. The response time of these sensors is around 20 s.
引用
收藏
页码:360 / 364
页数:5
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