Analysis of the magnetotransport channels in tunnel junctions with amorphous CoFeB

被引：8

作者：

Dimopoulos, T

Gieres, G

Wecker, J

Luo, Y

Samwer, K

机构：

[1] Siemens AG, Corp Technol CT MM1, D-91052 Erlangen, Germany

[2] Univ Gottingen, Inst Phys 1, D-37077 Gottingen, Germany

来源：

EUROPHYSICS LETTERS | 2004年 / 68卷 / 05期

关键词：

D O I：

10.1209/epl/i2004-10270-x

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

This work concerns the temperature and bias dependence of the magnetotransport properties of Al oxide-based tunnel junctions with an amorphous Co60Fe20B20 soft ferromagnetic electrode and CoFe10-based polycrystalline hard electrode. The junctions present high tunnel magnetoresistance of similar to50% at room temperature and similar to71% at 5 K. A model that takes magnon-assisted inelastic tunneling into account fits satisfactorily the parallel (P)and antiparallel (AP) conductance as a function of temperature. The extracted fitting parameters are then used to reproduce the low-bias anomaly of the P and AP conductance at low temperature.

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收藏

页码：706 / 712

页数：7

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