Optical properties of chemically deposited Bi2S3 thin films

被引：4

作者：

Al-Douri, AAJ

Madik, MP

机构：

[1] Univ Sharjah, Coll Arts & Sci, Dept Basic Sci, Sharjah, U Arab Emirates

[2] Univ Baghdad, Inst Technol, Baghdad, Iraq

来源：

RENEWABLE ENERGY | 2000年 / 21卷 / 3-4期

关键词：

D O I：

10.1016/S0960-1481(00)00082-3

中图分类号：

X [环境科学、安全科学];

学科分类号：

08 ; 0830 ;

摘要：

The optical properties of chemically deposited Bi2S3 have been calculated using the (T, R) method. The special distribution of the absorption coefficient shows the existence of an indirect energy gap and gives the values of E-g = 1.43 eV and the E-p = 0.51 eV, suggesting an allowed non-vertical absorption. The (epsilon(1), h nu) relation shows the direct and indirect transition between indirect valleys at 2.07 and 1.24 eV, respectively. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：411 / 416

页数：6