The role of oxygen containing impurities in defects formation in cesium halide crystals

被引：3

作者：

Hud, I ^{[1
]}

Garapyn, I ^{[1
]}

Pavlyk, B ^{[1
]}

机构：

[1] Ivan Franko Lviv Natl Univ, Dept Phys, UA-79005 Lvov, Ukraine

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 2003年 / 158卷 / 1-6期

关键词：

cesium halide; oxygen containing impurities; gamma- and X-irradiation;

D O I：

10.1080/1042015021000052782

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

The dependence of defect formation efficiency in CsI single crystals both on the type of oxygen containing impurities and the value of the absorbed irradiation dose was studied. Correlative results were obtained under investigation by methods of ionic thermocurrent (ITC), thermostimulated exoemission (TSEE), electrical conductivity and optical spectroscopy. The peculiarities of defect formation in gamma-irradiated CsI-CO3(SO4, OH) and X-irradiated CsI-OH single crystals are discussed.

引用

页码：151 / 156

页数：6