Giant magnetoresistance of self-assembled ErAs islands in GaAs

被引：14

作者：

Schmidt, DR ^{[1
]}

Ibbetson, JP ^{[1
]}

Brehmer, DE ^{[1
]}

Palmstrom, CJ ^{[1
]}

Allen, SJ ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA

来源：

MAGNETIC ULTRATHIN FILMS, MULTILAYERS AND SURFACES - 1997 | 1997年 / 475卷

关键词：

D O I：

10.1557/PROC-475-251

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have integrated nanometer-sized ErAs islands in GaAs, resulting in a nano-composite of paramagnetic particles in a semiconductor. Negative giant magnetoresistance of up to four orders of magnitude is observed at low temperatures. We can control the density and size of the ErAs islands. making this an ideal system to investigate transport in magnetic nano-structures.

引用

页码：251 / 256

页数：6