Colour detection using buried triple pn junction structure implemented in BiCMOS process

被引：16

作者：

Ben Chouikha, M ^{[1
]}

Lu, GN ^{[1
]}

Sedjil, M ^{[1
]}

Sou, G ^{[1
]}

机构：

[1] Univ Paris 06, Lab Instruments & Syst, F-75252 Paris 05, France

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 01期

关键词：

D O I：

10.1049/el:19980085

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A buried triple pn junction structure for colour detection is presented which can be implemented in a bipolar or BiCMOS process. The spectral responsivity of the device is characterised by three bandpass curves, selecting, respectively, blue, green and red components of a colour. A linear transformation method is developed for the colorimetric characterisation of the device. Colour differences between the detector specification and that of the CIE standard system have been evaluated. A mean colour difference of 2.15 has been obtained.

引用

页码：120 / 122

页数：3

共 4 条

[1] FABRICATION AND PERFORMANCE OF COLOR FILTER ARRAYS FOR SOLID-STATE IMAGERS [J].

DILLON, PLP ;

BRAULT, AT ;

HORAK, JR ;

GARCIA, E ;

MARTIN, TW ;

LIGHT, WA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (02) :97-101

[2] COLOR IMAGING-SYSTEM USING A SINGLE CCD AREA ARRAY [J].

DILLON, PLP ;

LEWIS, DM ;

KASPAR, FG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (02) :102-107

[3] Methods for characterizing colour scanners and digital cameras [J].

Johnson, T .

DISPLAYS, 1996, 16 (04) :183-191

[4]

LU GN, 1996, MECATRONICS 96 BESAN, P276

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