Direct observation of inversely polarized frozen nanodomains in fatigued ferroelectric memory capacitors

被引：39

作者：

Colla, EL ^{[1
]}

Stolichnov, I ^{[1
]}

Bradely, PE ^{[1
]}

Setter, N ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, Ceram Lab, CH-1015 Lausanne, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 10期

关键词：

D O I：

10.1063/1.1559951

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The direct observation of blocked polarization domains at the electrode-ferroelectric interface of electrically fatigued ferroelectric films is reported. Blocked nanodomains are believed to be the origin of polarization fatigue in ferroelectric nonvolatile memories but have not been directly observed so far due to the required upper metal electrode which impedes the direct access to the surface of the ferroelectric film. This problem has been solved by using low temperature melting metal as removable top electrode. After fatigue and subsequent top electrode removal it was possible to observe the polarization state of the fatigued capacitor and its depth profile by means of detection of the local piezoelectric activity with a conductive atomic force microscope tip. Blocked polarization domains with opposite polarization compared to the film body could be directly observed at the upper ferroelectrics surface. (C) 2003 American Institute of Physics.

引用

页码：1604 / 1606

页数：3

共 14 条

[1]

Al-Shareef H. N., 1994, Integrated Ferroelectrics, V5, P185, DOI 10.1080/10584589408017011

[2] The physics of ferroelectric memories [J].

Auciello, O ;

Scott, JF ;

Ramesh, R .

PHYSICS TODAY, 1998, 51 (07) :22-27

[3] Direct observation of region by region suppression of the switchable polarization (fatigue) in Pb(Zr,Ti)O3 thin film capacitors with Pt electrodes [J].

Colla, EL ;

Hong, SB ;

Taylor, DV ;

Tagantsev, AK ;

Setter, N ;

No, K .

APPLIED PHYSICS LETTERS, 1998, 72 (21) :2763-2765

[4] Discrimination between bulk and interface scenarios for the suppression of the switchable polarization (fatigue) in Pb(Zr,Ti)O3 thin films capacitors with Pt electrodes [J].

Colla, EL ;

Taylor, DV ;

Tagantsev, AK ;

Setter, N .

APPLIED PHYSICS LETTERS, 1998, 72 (19) :2478-2480

[5] Characterisation of the fatigued state of ferroelectric PZT thin-film capacitors [J].

Colla, EL ;

Kholkin, AL ;

Taylor, D ;

Tagantsev, AK ;

Brooks, KG ;

Setter, N .

MICROELECTRONIC ENGINEERING, 1995, 29 (1-4) :145-148

[6] Probing domains at the nanometer scale in piezoelectric thin films [J].

Durkan, C ;

Welland, ME ;

Chu, DP ;

Migliorato, P .

PHYSICAL REVIEW B, 1999, 60 (23) :16198-16204

[7]

GRUVERMAN A, 1996, FERROELECTRICS, V184, P3191

[8] Characteristics of PZT thin films as ultra-high density recording media [J].

Hidaka, T ;

Maruyama, T ;

Sakai, I ;

Saitoh, M ;

Wills, LA ;

Hiskes, R ;

Dicarolis, SA ;

Amano, J ;

Foster, CM .

INTEGRATED FERROELECTRICS, 1997, 17 (1-4) :319-327

[9]

Hidaka T, 1996, APPL PHYS LETT, V68, P2358, DOI 10.1063/1.115857

[10]

Stoliciinov I, 2000, MATER RES SOC SYMP P, V596, P387

← 1 2 →