Broad spectral bandwidth semiconductor lasers

被引：20

作者：

Krauss, TF ^{[1
]}

Hondromitros, G ^{[1
]}

Vogele, B ^{[1
]}

De La Rue, RM ^{[1
]}

机构：

[1] Univ Glasgow, Dept Elect & Elect Engn, Optoelect Res Grp, Glasgow G12 8QQ, Lanark, Scotland

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 13期

关键词：

semiconductor lasers; gallium arsenide;

D O I：

10.1049/el:19970777

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Wavelength-tuned semiconductorlasers have been realised in a GaAs/AlGaAs structure in which the active layer contains three different sizes of quantum will. Extended cavity operation with an external grating has enabled a useful tuning range of 88 nm (778-866 nm) to be demonstrated while the threshold current varied by no more than 20 mA about a nominal value of 100 mA across the tuning range. Alternatively, the wide spectral bandwidth of the structure could be used in very short-pulse modelocked lasers.

引用

页码：1142 / 1143

页数：2

共 4 条

[1] Broadly tunable external cavity laser diodes with staggered thickness multiple quantum wells [J].

Gingrich, HS ;

Chumney, DR ;

Sun, SZ ;

Hersee, SD ;

Lester, LF ;

Brueck, SRJ .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (02) :155-157

[2] WIDE-RANGE WAVELENGTH TUNING OF AN ASYMMETRIC DUAL QUANTUM WELL LASER WITH INHOMOGENEOUS CURRENT INJECTION [J].

IKEDA, S ;

SHIMIZU, A ;

SEKIGUCHI, Y ;

HASEGAWA, M ;

KANEKO, K ;

HARA, T .

APPLIED PHYSICS LETTERS, 1989, 55 (20) :2057-2059

[3]

MCILROY PWA, 1985, IEEE J QUANTUM ELECT, V21, P1958, DOI 10.1109/JQE.1985.1072606

[4] OPTIMIZED FABRY-PEROT (ALGA)AS QUANTUM-WELL LASERS TUNABLE OVER 105 NM [J].

MEHUYS, D ;

MITTELSTEIN, M ;

YARIV, A ;

SARFATY, R ;

UNGAR, JE .

ELECTRONICS LETTERS, 1989, 25 (02) :143-145

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