High-frequency AC characteristics of 1.5 nm gate oxide MOSFETs

被引：76

作者：

Momose, HS

Morifuji, E

Yoshitomi, T

Ohguro, T

Saito, M

Morimoto, T

Katsumata, Y

Iwai, H

机构：

来源：

IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996 | 1996年

关键词：

D O I：

10.1109/IEDM.1996.553132

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Results of the high-frequency AC characteristics of 1.5 nm direct-tunneling gate oxide MOSFETs were shown for the first time. Very high cutoff frequencies of more than 150 GHz were obtained at gate lengths of sub-0.1 mu m regime due to the high transconductance. Excellent NFmin value of 0.51 dB was obtained at high-frequency operation of 2 GHz. Also, good operation of the 1.5 nm gate oxide CMOS ring oscillator has been confirmed.

引用

页码：105 / 108

页数：4