Increased mobility from regioregular poly(3-hexylthiophene) field-effect transistors

被引:373
作者
Wang, GM [1 ]
Swensen, J [1 ]
Moses, D [1 ]
Heeger, AJ [1 ]
机构
[1] Univ Calif Santa Barbara, Inst Polymers & Organ Solids, Santa Barbara, CA 93106 USA
关键词
D O I
10.1063/1.1568526
中图分类号
O59 [应用物理学];
学科分类号
摘要
Relatively high mobilities, mu = 0.2 cm(2) V-1 s(-1) in the accumulation mode and mu = 0.17 cm(2) V-1 s(-1) in the depletion mode, are reported for regioregular poly(3-hexylthiophene) (RR-P3HT) in field-effect transistors (FETs). Significantly higher mobility is obtained from FETs in which the RR-P3HT film is applied by dip-coating to a thickness of only 20-40 Angstrom. These observations suggest that structural order of the semiconducting polymer at the interface between the semiconducting polymer and the SiO2 gate insulator is of paramount importance for achieving high carrier mobility. Heat treatment under nitrogen at 160 degreesC for 3 min increases the on/off ratio of the FET. (C) 2003 American Institute of Physics.
引用
收藏
页码:6137 / 6141
页数:5
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