Decay dynamics in disordered systems: Application to heavily doped semiconductors

被引:40
作者
Kuskovsky, I [1 ]
Neumark, GF
Bondarev, VN
Pikhitsa, PV
机构
[1] Columbia Univ, Dept Chem Engn Mat Sci & Min Engn, New York, NY 10027 USA
[2] Odessa State Univ, Phys Res Inst, UA-270026 Odessa, Ukraine
关键词
D O I
10.1103/PhysRevLett.80.2413
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have calculated, quantitatively, the time decay of donor-acceptor pair luminescence in compensated semiconductors, incorporating the effect of the potential fluctuations which exist in such materials. We show that the often-reported stretched-exponential decay law can here be derived rigorously, but only to a very close approximation, and, moreover, only provided that there is an alternate, activated, decay path. We also show that in the absence of such an alternate path, the decay is slower. We thus conclude that the stretched-exponential "law" provides good empirical fitting, but has no fundamental significance.
引用
收藏
页码:2413 / 2416
页数:4
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