Surfaces and prototypical interfaces of silicon and germanium

被引：4

作者：

Le Lay, G

机构：

[1] CNRS, CRMC2, F-13288 Marseille 09, France

[2] Univ Aix Marseille 1, UFR Sci Mat, Marseille, France

来源：

JOURNAL DE PHYSIQUE IV | 1997年 / 7卷 / C6期

关键词：

D O I：

10.1051/jp4:1997610

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We describe in this paper a few peculiar phenomena recently discovered at the (111) and (100) surfaces of silicon and germanium covered with ultra-thin non-reactive metal overlayers : tin, lead and bismuth as well as at their "prototypical" interfaces for thick metal films.

引用

收藏

页码：115 / 125

页数：11

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