High quality La2O3 and Al2O3 gate dielectrics with equivalent oxide thickness 5-10Å

被引：173

作者：

Chin, A ^{[1
]}

Wu, YH ^{[1
]}

Chen, SB ^{[1
]}

Liao, CC ^{[1
]}

Chen, WJ ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

来源：

2000 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2000年

关键词：

D O I：

10.1109/VLSIT.2000.852751

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

High quality La2O3 and Al2O3 are fabricated with EOT of 4.8 and 9.6 Angstrom, leakage current of 0.06 and 0.4A/cm(2) and D-it of both 3x10(10) eV(-1)/cm(2), respectively. The high K is further evidenced from high MOSFET's I-d and g(m) with low I-off Good SILC and Q(BD) are obtained and comparable with. SiO2. The low EOT is due to the high thermodynamic stability in contact with Si and stable after H-2 annealing up to 550 degrees C.

引用

页码：16 / 17

页数：2