Electron effective mass and phonon modes in GaAs incorporating boron and indium

被引：26

作者：

Hofmann, T. ^{[1
]}

Schubert, M.

Leibiger, G.

Gottschalch, V.

机构：

[1] Univ Nebraska, Dept Elect Engn, Lincoln, NE 68588 USA

[2] Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USA

[3] Freiberger Compound Mat GmbH, D-09599 Freiberg, Germany

[4] Univ Leipzig, Fac Chem & Mineral, Inst Inorgan Chem, D-04103 Leipzig, Germany

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 18期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2735669

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The strain-free boron- and indium-containing GaAs compounds are promising candidates for III-V semiconductor solar cell absorber materials with lattice match to GaAs, for which experimental data of the electronic band structure are widely unknown. For nondegenerate, silicon-doped, n-type B0.03In0.06Ga0.91As with band-gap energy of 1.36 eV, determined by near-infrared ellipsometry, a strong increase of the electron effective mass of 44% in B0.03In0.06Ga0.91As compared to In0.06Ga0.94As is obtained from far-infrared magneto-optic generalized ellipsometry studies. The authors thereby obtain the vibrational lattice mode behavior. For BAs, an experimentally obscure compound, the curvature of the Gamma-point conduction band thus extrapolates to the free electron mass. (C) 2007 American Institute of Physics.

引用

页数：3

共 22 条

[1] ASPNES DE, 1998, HDB OPTICAL CONSTANT, P89
[2] BARNETT A, UNPUB 2006 IEEE 4 WO, V2, P2560
[3] INFRARED REFLECTION SPECTRA OF GA1-XINXAS - A NEW TYPE OF MIXED-CRYSTAL BEHAVIOR
BRODSKY, MH
LUCOVSKY, G
[J]. PHYSICAL REVIEW LETTERS, 1968, 21 (14) : 990 - &
[4] Multichannel Mueller matrix ellipsometry for simultaneous real-time measurement of bulk isotropic and surface anisotropic complex dielectric functions of semiconductors
Chen, C
An, I
Collins, RW
[J]. PHYSICAL REVIEW LETTERS, 2003, 90 (21) : 4 - 217402
[5] Epitaxial growth of BGaAs and BGaInAs by MOCVD
Geisz, JF
Friedman, DJ
Kurtz, S
Olson, JM
Swartzlander, AB
Reedy, RC
Norman, AG
[J]. JOURNAL OF CRYSTAL GROWTH, 2001, 225 (2-4) : 372 - 376
[6] MOVPE growth of BxGa1-xAs, BxGa1-x-yInyAs, and BxAl1-xAs alloys on (001) GaAs
Gottschalch, V
Leibiger, G
Benndorf, G
[J]. JOURNAL OF CRYSTAL GROWTH, 2003, 248 : 468 - 473
[7] Optical-phonon behavior in Ga1-xInxAs:: The role of microscopic strains and ionic plasmon coupling
Groenen, J
Carles, R
Landa, G
Guerret-Piecourt, C
Fontaine, C
Gendry, M
[J]. PHYSICAL REVIEW B, 1998, 58 (16) : 10452 - 10462
[8] Electronic structure of BAs and boride III-V alloys
Hart, GLW
Zunger, A
[J]. PHYSICAL REVIEW B, 2000, 62 (20) : 13522 - 13537
[9] Terahertz magneto-optic generalized ellipsometry using synchrotron and blackbody radiation
Hofmann, T.
Schade, U.
Herzinger, C. M.
Esquinazi, P.
Schubert, M.
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 2006, 77 (06)
[10] Conduction-band electron effective mass in Zn0.87Mn0.13Se measured by terahertz and far-infrared magnetooptic ellipsometry -: art. no. 042105
Hofmann, T
Schade, U
Agarwal, KC
Daniel, B
Klingshirn, C
Hetterich, M
Herzinger, CM
Schubert, M
[J]. APPLIED PHYSICS LETTERS, 2006, 88 (04) : 1 - 3

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