A heating stage up to 1173 K for X-ray diffraction studies in the whole orientation space

被引:61
作者
Resel, R
Tamas, E
Sonderegger, B
Hofbauer, P
Keckes, J
机构
[1] Graz Univ Technol, Inst Solid State Phys, A-8010 Graz, Austria
[2] Anton Paar GmbH, A-8054 Graz, Austria
[3] Univ Leoben, Inst Met Sci, A-8700 Leoben, Austria
[4] Austrian Acad Sci, Erich Schmid Inst Mat Sci, A-8700 Leoben, Austria
关键词
D O I
10.1107/S0021889802019568
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A multi-purpose heating attachment designed primarily for X-ray four-circle diffractometers but applicable also for classical powder diffraction is presented. When working in reflection geometry, the air-cooled heating stage allows diffraction studies to be performed on plate-like samples up to 1173 K in the whole orientation space. This paper gives a detailed description of the assembly and important technical specifications for the performance of experiments. The heating characteristics of the heating stage, the displacement of the sample from the goniometer centre as a result of thermal expansion and the influence of the protecting dome on the diffraction experiment are presented. The simple technical construction, the low weight, the small size and good heating performance make this equipment a general purpose heating attachment for Xray diffraction experiments in reflection geometry.
引用
收藏
页码:80 / 85
页数:6
相关论文
共 13 条
[1]  
[Anonymous], INT TABLES CRYSTALLO
[2]  
CHUNG DDL, 1993, XRAY DIFFRACTION ELE
[3]   An improved goniometer head for high-temperature single-crystal X-ray diffraction [J].
Delarue, P ;
Jannin, M .
JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1999, 32 :824-826
[4]   Adaptation of the Rietveld method to the characterization of the lamellar microstructure of polymers.: 2.: Influence of a tilt of chain axes versus the normal to basal planes of crystalline lamellae [J].
Dupont, O ;
Ivanov, DA ;
Jonas, AM ;
Legras, R .
JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1999, 32 :497-504
[5]   LATTICE CONSTANTS AND THERMAL EXPANSION OF SILICON UP TO 900-DEGREES-C BY X-RAY METHOD [J].
DUTTA, BN .
PHYSICA STATUS SOLIDI, 1962, 2 (08) :984-987
[6]   A new high-temperature furnace chamber [J].
Fantner, EB ;
Koppelhuber-Bitschnau, B ;
Mautner, FA ;
Doppler, P ;
Gautsch, J .
EPDIC 5, PTS 1 AND 2, 1998, 278-2 :260-263
[7]   X-RAY SINGLE CRYSTAL STRUCTURE ANALYSIS TECHNIQUE FOR HIGH TEMPERATURES [J].
HANIC, F ;
KUCERA, Z ;
MEDVED, F ;
PLUHAR, E .
JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1970, 3 :97-&
[8]   Evaluation of thermal and growth stresses in heteroepitaxial AIN thin films formed on (0001) sapphire by pulsed laser ablation [J].
Keckes, J ;
Six, S ;
Tesch, W ;
Resel, R ;
Rauschenbach, B .
JOURNAL OF CRYSTAL GROWTH, 2002, 240 (1-2) :80-86
[9]   Temperature dependence of stresses in GaN thin films grown on (0001) sapphire: Modeling of thermal stresses [J].
Keckes, J ;
Gerlach, JW ;
Averbeck, R ;
Riechert, H ;
Bader, S ;
Hahn, B ;
Lugauer, HJ ;
Lell, A ;
Härle, V ;
Wenzel, A ;
Rauschenbach, B .
APPLIED PHYSICS LETTERS, 2001, 79 (26) :4307-4309
[10]  
Klug H.P., 1974, XRAY DIFFRACTION PRO, V2nd, P992