Indolo[3,2-b]carbazole-based thin-film transistors with high mobility and stability

被引:353
作者
Wu, YL [1 ]
Li, YN [1 ]
Gardner, S [1 ]
Ong, BS [1 ]
机构
[1] Xerox Res Ctr Canada Ltd, Mat Design & Integrat Lab, Mississauga, ON L5K 2L1, Canada
关键词
D O I
10.1021/ja0456149
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Proper functionalization of indolo[3,2-b]carbazole led to a new class of high-performance organic semiconductors suitable for organic thin-film transistor (OTFT) applications. While 5,11-diaryl-substituted indolo[3,2-b]carbazoles without long alkyl side chains provided amorphous thin films upon vacuum deposition, those with sufficiently long alkyl side chains such as 5,11-bis(4-octylphenyl)indolo[3,2-b]carbazole self-organized readily into highly crystalline layered structures under similar conditions. OTFTs using channel semiconductors of this nature exhibited excellent field-effect properties, with mobility up to 0.12 cm(2) V-1 s(-1) and current on/off ratio to 10(7). As this class of organic semiconductors has relatively low HOMO levels and large band gaps, they also displayed good environmental stability even with prolonged exposure to amber light, an appealing characteristic for OTFT applications.
引用
收藏
页码:614 / 618
页数:5
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