Raman investigation of stress relaxation at the 3C-SiC/Si interface

被引：10

作者：

Bluet, JM

Falkovsky, LA

Planes, N

Camassel, J

机构：

[1] Univ Montpellier 2, CNRS, Etud Semicond Grp, F-34095 Montpellier 5, France

[2] Russian Acad Sci, LD Landau Theoret Phys Inst, Moscow 117334, Russia

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

SOI substrates; stress relaxation; nonuniform strain;

D O I：

10.4028/www.scientific.net/MSF.264-268.395

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The strain relaxation in 3C-SiC/Si has been investigated, both in the SiC layer and in the Si bulk using micro-Raman spectroscopy, The results obtained for SiC layer deposited on Si substrates and on SOI(Silicon On Insulator) substrates are compared. In the case of deposition on Si substrate the Raman lineshape is explained in the light of a recent model taking into the strain fluctuation due to local disorder.

引用

页码：395 / 398

页数：4

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