High-T-c transistors

被引：161

作者：

Mannhart, J

机构：

[1] IBM Research Division, Zurich Research Laboratory, 8803 Rüschlikon

来源：

SUPERCONDUCTOR SCIENCE & TECHNOLOGY | 1996年 / 9卷 / 02期

关键词：

ELECTROSTATIC CHARGE MODULATION; HIGH-TEMPERATURE SUPERCONDUCTOR; EXTERNAL ELECTRIC-FIELD; MICROWAVE SURFACE IMPEDANCE; YBA2CU3O7-DELTA THIN-FILMS; STATIC DIELECTRIC-CONSTANT; QUASI-PARTICLE SCATTERING; VORTEX FLOW TRANSISTOR; THERMAL-CONDUCTIVITY; JOSEPHSON JUNCTION;

D O I：

10.1088/0953-2048/9/2/001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An overview is provided of the state of the art for transistor-like three-terminal devices based on high-T-c superconductors. Superconducting base transistors, dielectric base transistors, vortex flow transistors, electric field-effect devices and quasiparticle-injection devices are reviewed and their fundamental limitations discussed.

引用

页码：49 / 67

页数：19

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