Hypothetical silicon nanotubes under axial compression

被引:28
作者
Kang, JW [1 ]
Hwang, HJ [1 ]
机构
[1] Chung Ang Univ, Sch Elect & Elect Engn, Inst Sci & Technol, Computat Semicond Lab,DongJak Ku, Seoul 156756, South Korea
关键词
D O I
10.1088/0957-4484/14/3/309
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This study shows the response of silicon nanotubes (SiNTs) under axial compression using an atomistic simulation based on the Tersoff potential. The application of pressure, proportional to the deformation within Hook's law, eventually led to a collapse of the SiNT and an abrupt change in structure. Using the sum of the cross sections of the atoms on the SiNT cross section and the SiNT pressure, we determined Young's modulus for the SiNTs that was constant irrespective of the SiNTs' diameter. As the SiNTs' diameter increased, the collapse pressure, that is the critical stress, linearly decreased. However, the net forces on the SiNTs at their collapse were almost constant irrespective of the SiNTs' diameter. We calculated the variations in the unit cell volume as a function of pressure, which were not dealt with in previous works considering carbon nanotubes under compression. Using properly chosen parameters for the SiNTs (Young's modulus, effective spring constant, diameter, lattice constant and cylindrical volume modulus), the critical strain, the collapse pressure, the elastic energy and the critical volume at which the SiNT buckling occurs can be estimated by equations given in this work.
引用
收藏
页码:402 / 408
页数:7
相关论文
共 53 条
[1]   STRUCTURE OF THE SI-12 CLUSTER [J].
BAHEL, A ;
RAMAKRISHNA, MV .
PHYSICAL REVIEW B, 1995, 51 (19) :13849-13851
[2]  
Chen Q, 2002, ADV MATER, V14, P1208, DOI 10.1002/1521-4095(20020903)14:17<1208::AID-ADMA1208>3.0.CO
[3]  
2-0
[4]   BORON-NITRIDE NANOTUBES [J].
CHOPRA, NG ;
LUYKEN, RJ ;
CHERREY, K ;
CRESPI, VH ;
COHEN, ML ;
LOUIE, SG ;
ZETTL, A .
SCIENCE, 1995, 269 (5226) :966-967
[5]   Elastic properties of single-walled carbon nanotubes in compression [J].
Cornwell, CF ;
Wille, LT .
SOLID STATE COMMUNICATIONS, 1997, 101 (08) :555-558
[6]   Theoretical study of the structural and electronic properties of GaSe nanotubes [J].
Cote, M ;
Cohen, ML ;
Chadi, DJ .
PHYSICAL REVIEW B, 1998, 58 (08) :R4277-R4280
[7]   Direct mechanical measurement of the tensile strength and elastic modulus of multiwalled carbon nanotubes [J].
Demczyk, BG ;
Wang, YM ;
Cumings, J ;
Hetman, M ;
Han, W ;
Zettl, A ;
Ritchie, RO .
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2002, 334 (1-2) :173-178
[8]   Ab initio calculations for a hypothetical material:: Silicon nanotubes [J].
Fagan, SB ;
Baierle, RJ ;
Mota, R ;
da Silva, AJR ;
Fazzio, A .
PHYSICAL REVIEW B, 2000, 61 (15) :9994-9996
[9]   Stability investigation and thermal behavior of a hypothetical silicon nanotube [J].
Fagan, SB ;
Mota, R ;
Baierle, RJ ;
Paiva, G ;
da Silva, AJR ;
Fazzio, A .
JOURNAL OF MOLECULAR STRUCTURE-THEOCHEM, 2001, 539 :101-106
[10]   HIGH-RATE, GAS-PHASE GROWTH OF MOS2 NESTED INORGANIC FULLERENES AND NANOTUBES [J].
FELDMAN, Y ;
WASSERMAN, E ;
SROLOVITZ, DJ ;
TENNE, R .
SCIENCE, 1995, 267 (5195) :222-225