Spin-polarized current switching of a Co thin film nanomagnet

被引:314
作者
Albert, FJ [1 ]
Katine, JA
Buhrman, RA
Ralph, DC
机构
[1] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA
[2] Cornell Univ, Atom & Solid State Phys Lab, Ithaca, NY 14853 USA
关键词
D O I
10.1063/1.1330562
中图分类号
O59 [应用物理学];
学科分类号
摘要
A thin film Co nanomagnet in the shape of an elongated hexagon has been incorporated in a vertical device structure consisting of the nanomagnet and a thin Cu spacer layer formed on top of a thick Co film. The spin-polarized current flowing between the nanomagnet and the Co film is used to abruptly switch the magnetic alignment of the nanomagnet relative to that of the thick Co layer by the transfer of spin angular momentum from the conduction electrons to the nanomagnet moment. The shape anisotropy in the nanomagnet promotes the single domain behavior required for nonvolatile memory applications. (C) 2000 American Institute of Physics. [S0003-6951(00)04549-6].
引用
收藏
页码:3809 / 3811
页数:3
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