Spatial homogeneity of optically switched semiconductor photonic crystals and of bulk semiconductors

In this paper we discuss free carrier generation by pulsed laser fields as a mechanism to switch the optical properties of semiconductor photonic crystals and bulk semiconductors on an ultrafast time scale. Requirements are set for the switching magnitude, the time-scale, the induced absorption, as well as the spatial homogeneity, in particular for silicon at lambda=1550 nm. Using a nonlinear absorption model, we calculate carrier depth profiles and define a homogeneity length l(hom). Homogeneity length contours are visualized in a plane spanned by the linear and two-photon absorption coefficients. Such a generalized homogeneity plot allows us to find optimum switching conditions at pump frequencies near nu/c=5000 cm(-1) (lambda=2000 nm). We discuss the effect of scattering in photonic crystals on the homogeneity. We experimentally demonstrate a 10% refractive index switch in bulk silicon within 230 fs with a lateral homogeneity of more than 30 mum. Our results are relevant for switching of modulators in the absence of photonic crystals. (C) 2005 American Institute of Physics.