Advances-in continuous, in-line processing of stable CdS/CdTe devices

被引：19

作者：

Barth, KL ^{[1
]}

Enzenroth, RA ^{[1
]}

Sampath, WS ^{[1
]}

机构：

[1] Colorado State Univ, Mat Engn Lab, Ft Collins, CO 80523 USA

来源：

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年

关键词：

D O I：

10.1109/PVSC.2002.1190624

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A continuous, in-line process suitable for large volume manufacturing of CdS/CdTe photovoltaic (PV) devices has been demonstrated at the pilot scale level. The pilot scale system incorporates the steps of glass heating, all semiconductor depositions, chloride heat treatment and ohmic contact formation in one chamber operating at modest vacuum. The cycle time is 2 minutes. The process is scaleable, uniform and reproducible. Utilizing this process, devices with efficiencies greater than 12% (verified at NREL) are repeatedly fabricated on unmodified Pilkington TEC 15 substrates without anti-reflection coatings. The stability of the devices is very promising. Many devices are being tested outdoors for stability. Outdoor results are compared to indoor stress testing. Detailed analyses of the novel copper based ohmic contact using X-Ray photoelectron spectroscopy (XPS) and glancing angle X-Ray diffraction (GAXRD) are presented.

引用

页码：551 / 554

页数：4

共 5 条

[1]

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Gorbachev, VV ;

Terekhov, VA ;

Kashkarov, VM ;

Panfilova, EV ;

Shchukarev, AV .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 2001, 114 :901-908

[3]

MCMAHON TJ, 1998, P 15 PHOT PROGR REV, P54

[4]

SAMPATH WS, 2001, NCPV PROGR REV M

[5]

WATERS DM, 1998, THESIS U CALIF SANTA

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