Characterization of zirconium - Diamond interfaces

被引：5

作者：

Baumann, PK

Bozeman, SP

Ward, BL

Nemanich, RJ

机构：

来源：

III-NITRIDE, SIC AND DIAMOND MATERIALS FOR ELECTRONIC DEVICES | 1996年 / 423卷

关键词：

D O I：

10.1557/PROC-423-143

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin Zr films were deposited on natural single crystal diamond (100) substrates by e-beam evaporation in ultra-high vacuum (UHV). Before metal deposition the surfaces were cleaned by UHV anneals at either 500 degrees C or 1150 degrees C. Following either one of these treatments a positive electron affinity was determined by means of UV photoemission spectroscopy (UPS). Depositing 2 Angstrom of Zr induced a NEA on both surfaces. Field emission current - voltage measurements resulted in a threshold field (for a current of 0.1 mu A) of 79 V/mu m for positive electron affinity diamond surfaces and values as low as 20 V/mu m for Zr on diamond.

引用

页码：143 / 148

页数：6