Alignment of defect levels and band edges through hybrid functionals: Effect of screening in the exchange term

被引:126
作者
Komsa, Hannu-Pekka [1 ]
Broqvist, Peter
Pasquarello, Alfredo
机构
[1] Ecole Polytech Fed Lausanne, Inst Theoret Phys, CH-1015 Lausanne, Switzerland
基金
瑞士国家科学基金会;
关键词
GENERALIZED-GRADIENT APPROXIMATION; DENSITY; SIO2; COMPUTATION; GAUSSIAN-2; LIQUID; ATOMS; GAPS;
D O I
10.1103/PhysRevB.81.205118
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigate how various treatments of exact exchange affect defect charge transition levels and band edges in hybrid functional schemes for a variety of systems. We distinguish the effects of long-range vs short-range exchange and of local vs nonlocal exchange. This is achieved by the consideration of a set of four functionals, which comprise the semilocal Perdew-Burke-Ernzerhof (PBE) functional, the PBE hybrid (PBE0), the Heyd-Scuseria-Ernzerhof (HSE) functional, and a hybrid derived from PBE0 in which the Coulomb kernel in the exact exchange term is screened as in the HSE functional but which, unlike HSE, does not include a local expression compensating for the loss of the long-range exchange. We find that defect levels in PBE0 and in HSE almost coincide when aligned with respect to a common reference potential, due to the close total-energy differences in the two schemes. At variance, the HSE band edges determined within the same alignment scheme are found to shift significantly with respect to the PBE0 ones: the occupied and the unoccupied states undergo shifts of about +0.4 eV and -0.4 eV, respectively. These shifts are found to vary little among the materials considered. Through a rationale based on the behavior of local and nonlocal long-range exchange, this conclusion is generalized beyond the class of materials used in this study. Finally, we explicitly address the practice of tuning the band gap by adapting the fraction of exact exchange incorporated in the functional. When PBE0-like and HSE-like functionals are tuned to yield identical band gaps, their respective results for the positions of defect levels within the band gap and for the band alignments at interfaces are found to be very close.
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页数:12
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共 61 条
[1]   THE CRYSTAL STRUCTURE OF ZRO2 AND HFO2 [J].
ADAM, J ;
ROGERS, MD .
ACTA CRYSTALLOGRAPHICA, 1959, 12 (11) :951-951
[2]   Accurate excitation energies from time-dependent density functional theory: Assessing the PBE0 model [J].
Adamo, C ;
Scuseria, GE ;
Barone, V .
JOURNAL OF CHEMICAL PHYSICS, 1999, 111 (07) :2889-2899
[3]   Toward reliable density functional methods without adjustable parameters: The PBE0 model [J].
Adamo, C ;
Barone, V .
JOURNAL OF CHEMICAL PHYSICS, 1999, 110 (13) :6158-6170
[4]  
Alkauskas A., UNPUB
[5]   Effect of improved band-gap description in density functional theory on defect energy levels in α-quartz [J].
Alkauskas, Audrius ;
Pasquarello, Alfredo .
PHYSICA B-CONDENSED MATTER, 2007, 401 :670-673
[6]   Charge state of the O2 molecule during silicon oxidation through hybrid functional calculations [J].
Alkauskas, Audrius ;
Broqvist, Peter ;
Pasquarello, Alfredo .
PHYSICAL REVIEW B, 2008, 78 (16)
[7]   Band offsets at semiconductor-oxide interfaces from hybrid density-functional calculations [J].
Alkauskas, Audrius ;
Broqvist, Peter ;
Devynck, Fabien ;
Pasquarello, Alfredo .
PHYSICAL REVIEW LETTERS, 2008, 101 (10)
[8]   Defect energy levels in density functional calculations: Alignment and band gap problem [J].
Alkauskas, Audrius ;
Broqvist, Peter ;
Pasquarello, Alfredo .
PHYSICAL REVIEW LETTERS, 2008, 101 (04)
[9]   Comparison of screened hybrid density functional theory to diffusion Monte Carlo in calculations of total energies of silicon phases and defects [J].
Batista, Enrique R. ;
Heyd, Jochen ;
Hennig, Richard G. ;
Uberuaga, Blas P. ;
Martin, Richard L. ;
Scuseria, Gustavo E. ;
Umrigar, C. J. ;
Wilkins, John W. .
PHYSICAL REVIEW B, 2006, 74 (12)
[10]   DENSITY-FUNCTIONAL THERMOCHEMISTRY .3. THE ROLE OF EXACT EXCHANGE [J].
BECKE, AD .
JOURNAL OF CHEMICAL PHYSICS, 1993, 98 (07) :5648-5652