Isoelectronic doping of AlGaN alloys with As and estimates of AlGaN/GaN band offsets

被引：13

作者：

Foxon, CT ^{[1
]}

Novikov, SV

Zhao, LX

Harrison, I

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[2] Univ Nottingham, Sch Elect & Elect Engn, Nottingham NG7 2RD, England

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 06期

关键词：

D O I：

10.1063/1.1599635

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The isoelectronic doping of AlxGa1-xN alloys with arsenic in films grown by molecular-beam epitaxy has been investigated. In photoluminescence spectra of AlxGa1-xN layers, with an increase in Al mole faction, there is a progressive shift of the position of the blue band emission towards higher energies. The observed energy shift for blue band emission is less than the corresponding increase in the band gap of AlxGa1-xN. A model is presented, which can explain the observed shift in the energy of the blue band emission. This model also allows the AlxGa1-xN/GaN valence band offset to be estimated. (C) 2003 American Institute of Physics.

引用

页码：1166 / 1168

页数：3

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