Electronic response and bandstructure modulation of carbon nanotubes in a transverse electrical field

被引：130

作者：

Li, Y ^{[1
]}

Rotkin, SV ^{[1
]}

Ravaioli, U ^{[1
]}

机构：

[1] Univ Illinois, Beckman Inst Adv Sci & Technol, Urbana, IL 61801 USA

来源：

NANO LETTERS | 2003年 / 3卷 / 02期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1021/nl0259030

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The electronic properties of carbon nanotubes (NTs) in a uniform transverse field are investigated within a single orbital tight-binding (TB) model. For doped nanotubes, the dielectric function is found to depend not only on symmetry of the tube, but also on radius and Fermi level position. Band gap opening/closing is predicted for zigzag tubes, while it is found that armchair tubes always remain metallic, which is explained by the symmetry in their configuration. The bandstructures for both types are considerably modified when the field strength is large enough to mix neighboring subbands.

引用

页码：183 / 187

页数：5

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