New silica glass "AQF" for 157 nm lithography

被引：4

作者：

Ikuta, Y ^{[1
]}

Kikugawa, S ^{[1
]}

Kawahara, T ^{[1
]}

Mishiro, H ^{[1
]}

Shimodaira, N ^{[1
]}

Yoshizawa, S ^{[1
]}

机构：

[1] Asahi Glass Co Ltd, Semicond Devices & Mat Div, Chiyoda Ku, Tokyo 1008405, Japan

来源：

OPTICAL MICROLITHOGRAPHY XIII, PTS 1 AND 2 | 2000年 / 4000卷

关键词：

silica glass; F-2; laser; 157; nm; vacuum-UV light;

D O I：

10.1117/12.388990

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Projection photolithography at 157 nm is now under research as a possible extension of current 248 nm and planned 193 nm technologies. We have succeeded in the development of the modified fused silica glass "AQF" for 157 nm lithography. In this paper, we present the performance of the newest material; AQF/Ver.2.1. Transmission and its uniformity at 157 nm is better than 78 +/- 1.5 %, and birefringence is within 2nm. The surface flatness is less than 0.5 um, and surface defects over 0.4 um in size are free.

引用

页码：1510 / 1514

页数：5

共 4 条

[1] Lithography with 157 nm lasers [J].

Bloomstein, TM ;

Horn, MW ;

Rothschild, M ;

Kunz, RR ;

Palmacci, ST ;

Goodman, RB .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (06) :2112-2116

[2] The new silica glass for 157 nm lithography [J].

Ikuta, Y ;

Kikugawa, S ;

Masui, A ;

Shimodaira, N ;

Yoshizawa, S ;

Hirano, M .

EMERGING LITHOGRAPHIC TECHNOLOGIES III, PTS 1 AND 2, 1999, 3676 :827-833

[3] Relative variation of stress-optic coefficient with wavelength in fused silica and calcium fluoride [J].

Oakberg, TC .

POLARIZATION: MEASUREMENT, ANALYSIS, AND REMOTE SENSING II, 1999, 3754 :226-234

[4]

ROTHSCHILD M, 1999, ADV LITHOGRAPHY CRIT

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