Mask blanks for extreme ultraviolet lithography: Ion beam sputter deposition of low defect density Mo/Si multilayers

被引：45

作者：

Kearney, PA ^{[1
]}

Moore, CE ^{[1
]}

Tan, SI ^{[1
]}

Vernon, SP ^{[1
]}

Levesque, RA ^{[1
]}

机构：

[1] Univ Calif Lawrence Livermore Natl Lab, Livermore, CA 94551 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1997年 / 15卷 / 06期

关键词：

D O I：

10.1116/1.589665

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the growth of low defect density Mo/Si multilayer (ML) coatings. The coatings were grown in a deposition system specifically designed for extreme ultraviolet lithography mask blank fabrication. Complete, 81 layer, high reflectance Mo/Si ML coatings were deposited on 150 mm diam (100) oriented Si wafer substrates using ion beam sputter deposition. Process added defect densities correspond to 2x10(-2)/cm(-2) larger than 0.13 mu m as measured by optical scattering. This represents a reduction in defect density of Mo/Si ML coatings by a factor of 10(5). (C) 1997 American Vacuum Society.

引用

页码：2452 / 2454

页数：3