Importance of C2 Symmetry for the Device Performance of a Newly Synthesized Family of Fused-Ring Thiophenes

被引：29

作者：

He, Mingqian ^{[1
]}

Li, Jianfeng ^{[1
]}

Tandia, Adama ^{[1
]}

Sorensen, Michael ^{[1
]}

Zhang, Feixia ^{[1
]}

Fong, Hon Hang

Pozdin, Vladimir A.

Smilgies, Detlef-M. ^{[2
]}

Malliaras, George G.

机构：

[1] Corning Inc, SP FR 6, Corning, NY 14830 USA

[2] Cornell Univ, Cornell High Energy Synchrotron Source, Ithaca, NY 14853 USA

来源：

CHEMISTRY OF MATERIALS | 2010年 / 22卷 / 09期

基金：

美国国家科学基金会;

关键词：

FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; HIGH-MOBILITY; CHARGE-TRANSPORT; POLYMER; COPOLYMERS; SEMICONDUCTORS; STABILITY; MORPHOLOGY; DESIGN;

D O I：

10.1021/cm100524p

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We investigated the relationship between molecular structure and field-effect hole mobility in a family of fused-ring polythiophene copolymers that we designed recently. The results suggest that a repeat unit that possesses a C-2-axis perpendicular to the conjugation plane is important to achieve a high mobility. Our finding is supported by a review of literature data. Many polymer semiconductors showing a hole or electron mobility of > 0.1 cm(2)/(V s) feature a repeat unit with C-2 symmetry; however, exceptions have been found from some push pull polymer structures.

引用

收藏

页码：2770 / 2779

页数：10

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