Importance of C2 Symmetry for the Device Performance of a Newly Synthesized Family of Fused-Ring Thiophenes

被引:29
作者
He, Mingqian [1 ]
Li, Jianfeng [1 ]
Tandia, Adama [1 ]
Sorensen, Michael [1 ]
Zhang, Feixia [1 ]
Fong, Hon Hang
Pozdin, Vladimir A.
Smilgies, Detlef-M. [2 ]
Malliaras, George G.
机构
[1] Corning Inc, SP FR 6, Corning, NY 14830 USA
[2] Cornell Univ, Cornell High Energy Synchrotron Source, Ithaca, NY 14853 USA
基金
美国国家科学基金会;
关键词
FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; HIGH-MOBILITY; CHARGE-TRANSPORT; POLYMER; COPOLYMERS; SEMICONDUCTORS; STABILITY; MORPHOLOGY; DESIGN;
D O I
10.1021/cm100524p
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We investigated the relationship between molecular structure and field-effect hole mobility in a family of fused-ring polythiophene copolymers that we designed recently. The results suggest that a repeat unit that possesses a C-2-axis perpendicular to the conjugation plane is important to achieve a high mobility. Our finding is supported by a review of literature data. Many polymer semiconductors showing a hole or electron mobility of > 0.1 cm(2)/(V s) feature a repeat unit with C-2 symmetry; however, exceptions have been found from some push pull polymer structures.
引用
收藏
页码:2770 / 2779
页数:10
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