TED control technology for suppression of reverse narrow channel effect in 0.1 μm MOS devices

被引：33

作者：

Ono, A ^{[1
]}

Ueno, R ^{[1
]}

Sakai, I ^{[1
]}

机构：

[1] NEC Corp Ltd, USLI Device Dev Labs, Kanagawa 229, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650353

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, it is revealed, for the first time, that transient enhanced diffusion (TED) causes the reverse narrow channel effect (RNCE), which has been considered as a geometrical effect in the case of shallow trench isolation (STI). We will demonstrate that the RNCE can be suppressed by TED control techniques, including (1) high ramping rate (similar to 300 degrees C/sec) RTA, (2) a defect-blocking layer containing nitrogen, and (3) post V-th adjustment I/I.

引用

页码：227 / 230

页数：4