The effect of Al/Pt interface reaction on lead-zirconate-titanate capacitor and the optimization of via contact for double metal ferroelectric RAM

被引：7

作者：

Hwang, YS ^{[1
]}

Lee, JW ^{[1
]}

Lee, SY ^{[1
]}

Koo, BJ ^{[1
]}

Jung, DJ ^{[1
]}

Chun, YS ^{[1
]}

Lee, MH ^{[1
]}

Shin, DW ^{[1
]}

Shin, SH ^{[1
]}

Lee, SE ^{[1
]}

Kim, BH ^{[1
]}

Kang, NS ^{[1
]}

Kim, KN ^{[1
]}

机构：

[1] Samsung Elect Co, Semicond R&D Ctr, Technol Dev, Yongin City, Kyungki Do, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 3B期

关键词：

FeRAM; PZT; via contact; Schottky barrier; Pt/Al; diffusion barrier;

D O I：

10.1143/JJAP.37.1332

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of the platinum and aluminum interface reaction on the capacitor properties were investigated in 64 k ferroelectric random access memory (RAM). Aluminum diffused into platinum and reacted to form an intermetallic compound during the post-anneal when aluminum had direct contact with the top platinum layer of the ferroelectric capacitor. The Al/Pt/PZT contact was chanced into an Al-Pt and lead-zirconate-titanate contact by the reaction. As a result, ferroelectric properties degraded and the leakage current of the top electrode and lead-zirconate-tianate contact started to increase after annealing at 300 degrees C. The capacitor structure was destroyed by the volume expansion due to the Al/Pt reaction at 400 degrees C. To prevent this reaction, a TiN layer was introduced as the barrier layer. This contact scheme showed no breakdown of the ferroelectric capacitor up to 400 degrees C which indicated that TiN acts as a good diffusion barrier for the double-metal process.

引用

页码：1332 / 1335

页数：4

共 5 条

[1] ANTPOHLER W, 1994, 4 INT C EL CER APPL, V1, P169
[2] BRANDES EA, SMITHELLS METALS REF, P11
[3] BRUCHHAUS R, 1992, MATER RES SOC S P, V243, P123
[4] AN EXPERIMENTAL 512-BIT NONVOLATILE MEMORY WITH FERROELECTRIC STORAGE CELL
EVANS, JT
WOMACK, R
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1988, 23 (05) : 1171 - 1175
[5] TANABE N, 1995, S VLSI TECHN, P123

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