Large magnetoresistance at room temperature in semiconducting polymer sandwich devices -: art. no. 185

被引:259
作者
Francis, TL
Mermer, Ö
Veeraraghavan, G
Wohlgenannt, M [1 ]
机构
[1] Univ Iowa, Dept Phys & Astron, Iowa City, IA 52242 USA
[2] Univ Iowa, Dept Elect & Comp Engn, Iowa City, IA 52242 USA
来源
NEW JOURNAL OF PHYSICS | 2004年 / 6卷
关键词
D O I
10.1088/1367-2630/6/1/185
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report on the discovery of a large, room temperature magnetoresistance (MR) effect in polyfluorene sandwich devices in weak magnetic fields. We characterize this effect and discuss its dependence on field direction, voltage, temperature, film thickness, electrode materials, and ( unintentional) impurity concentration. Negative MR is usually observed, but positive MR can also be achieved under high applied electric fields. The MR effect reaches up to 10% at fields of 10 mT at room temperature. The effect shows only a weak temperature dependence and is independent of the sign and direction of the magnetic field. We find that the effect is related to the hole current in the devices. To the best of our knowledge, the discovered effect is not adequately described by any of the MR mechanisms known to date.
引用
收藏
页码:1 / 8
页数:8
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