Design and fabrication of 60-Gb/s InP-based monolithic photoreceiver OEICs and modules

被引:14
作者
Bach, HG [1 ]
Beling, A [1 ]
Mekonnen, GG [1 ]
Schlaak, W [1 ]
机构
[1] Heinrich Hertz Inst Nachrichtentech Berlin GmbH, D-10587 Berlin, Germany
关键词
HEMT; InP; monolithic microwave integrated circuit (MMIC); optoelectronic integrated circuit (OEIC); photodiodes; photoreceiver; PIN; waveguides;
D O I
10.1109/JSTQE.2002.806713
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An InP-based photoreceiver comprising a waveguide-integrated photodiode and a traveling-wave amplifier is presented, which allows de-coupled interfacing to subsequent electronics without a bias-T. Getting rid of the bias-T provides cost savings of the receiver operation and improves the available bandwidth, gain, and gain flatness. The redesigned receiver optoelectronic integrated circuit was fully packaged into a pigtailed module with a coaxial 1.85-mm connector. Its optoelectronic conversion capability for nonreturn-to-zero modulated data rates up to 66 Gb/s is shown.
引用
收藏
页码:1445 / 1450
页数:6
相关论文
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