Ion gel gated polymer thin-film transistors

被引:414
作者
Lee, Jiyoul
Panzer, Matthew J.
He, Yiyong
Lodge, Timothy P.
Frisbie, C. Daniel [1 ]
机构
[1] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA
[2] Univ Minnesota, Dept Chem, Minneapolis, MN 55455 USA
关键词
D O I
10.1021/ja070875e
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We have fabricated polymer semiconductor thin-film transistors using an ion gel (ionic liquid plus triblock copolymer) as the gate dielectric layer. The gate capacitance of the ion gel can be as large as 40 mu F/cm(2) at 10 Hz and 2 mu F/cm(2) at 1 kHz. In addition, the polarization response time of the ion gel is much faster than previously tested solid polymer electrolytes, allowing the ion gel gated transistors to operate at higher frequencies (> 100 Hz).
引用
收藏
页码:4532 / +
页数:3
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