Current-source a-Si:H thin-film transistor circuit for active-matrix organic light-emitting displays

被引：74

作者：

He, Y ^{[1
]}

Hattori, R ^{[1
]}

Kanicki, J ^{[1
]}

机构：

[1] Univ Michigan, Solid State Elect Lab, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2000年 / 21卷 / 12期

关键词：

amorphous semiconductors; light-emitting diodes; light-emitting diode displays; thin-film transistors;

D O I：

10.1109/55.887475

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we describe a four thin-him-transistor (TFT) circuit based on hydrogenated amorphous silicon (a-Si : H) technology, This circuit can provide a constant output current level and can be automatically adjusted for TFT threshold voltage variations. The experimental results indicated that, for TFT threshold voltage shift as large as similar to3 V, the output current variations can be less than 1 and 5% for high (greater than or equal to0.5 muA) and low (less than or equal to0.1 muA) current levels, respectively. This circuit can potentially he used for the active-matrix organic light-emitting displays (AM-OLEDs).

引用

页码：590 / 592

页数：3

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