Point defects and transport in binary and ternary, non-stoichiometric oxides

被引:12
作者
Aggarwal, S
Topfer, J
Tsai, TL
Dieckmann, R [1 ]
机构
[1] Cornell Univ, Dept Mat Sci & Engn, Bard Hall, Ithaca, NY 14853 USA
[2] Univ Maryland, Dept Mat & Nucl Engn, College Pk, MD 20741 USA
[3] Hermsdorfer Inst Tech Keram EV, D-07629 Hermsdorf, Germany
[4] Motorola Inc, Mat Technol Ctr, Mesa, AZ 85202 USA
关键词
point defects; transport; diffusion; electrical conductivity; oxides;
D O I
10.1016/S0167-2738(97)00124-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Discussed are: (i) experimental results for the variation of the oxygen content, the electrical conductivity and the iron tracer diffusion in fayalite, Fe2SiO4, (ii) the relationship between point defects, the deviation from stoichiometry, delta, in Fe3-deltaO4 and the iron tracer diffusion, (iii) the deviation from stoichiometry and the cation tracer diffusion in iron-based spinels of the type (MexFe1-x)(3-delta)O-4 and (iv) the influence of near-boundary regions in polycrystalline Fe3-deltaO4 and Cu2-deltaO on the overall variation of the oxygen content as a function of the oxygen partial pressure.
引用
收藏
页码:321 / 331
页数:11
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