Mobility laws in dislocation dynamics simulations

被引：96

作者：

Cai, W ^{[1
]}

Bulatov, VV ^{[1
]}

机构：

[1] Lawrence Livermore Natl Lab, Livermore, CA 94550 USA

来源：

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 2004年 / 387卷

关键词：

crystal plasticity; dislocation dynamics; mobility;

D O I：

10.1016/j.msea.2003.12.085

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Prediction of the plastic deformation behavior of single crystals based on the collective dynamics of dislocations has been a challenge for computational materials science for a number of years. The difficulty lies in the inability of existing dislocation dynamics (DD) codes to handle a sufficiently large number of dislocation lines, to establish a statistically representative model of crystal plasticity. A new massively parallel DID code is developed that is capable of modeling million-dislocation systems by employing thousands of processors. We discuss an important ingredient of this code - the mobility laws dictating the behavior of individual dislocations. They are materials input for DD simulations and are constructed based on the understanding of dislocation motion at the atomistic level. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：277 / 281

页数：5

共 5 条

[1]

Cai W, 2004, SOLID MECH APPL, V115, P1

[2]

Cai Wei, 2001, THESIS MIT

[3] Molecular dynamics simulations of motion of edge and screw dislocations in a metal [J].