High-surface-area SnO2:: a novel semiconductor-oxide gas sensor

被引：123

作者：

Li, GJ ^{[1
]}

Kawi, S ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Chem Engn, Singapore 119260, Singapore

来源：

MATERIALS LETTERS | 1998年 / 34卷 / 1-2期

关键词：

SnO2; H-2 gas sensor; high surface area; surfactant; semiconductor oxide;

D O I：

10.1016/S0167-577X(97)00142-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High surface area SnO2 sensor materials were systematically synthesized by a surfactant incorporating method. After calcination at 723 K, a high BET surface area of 156.8 m(2)/g was obtained. The sensing properties of the high surface area SnO2 material were studied using H-2 as the probing gas. It is found that a linear relationship exists between sensor surface area and its sensitivity to H-2. (C) 1998 Elsevier Science B.V.

引用

页码：99 / 102

页数：4

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