Effects of multi-defects at metal/semiconductor interfaces on electrical properties and their influence on stability and lifetime of thin film solar cells

被引：35

作者：

Dharmadasa, IM

Bunning, JD

Samantilleke, AP

Shen, T

机构：

[1] Sheffield Hallam Univ, Solar Energy Grp, Sch Sci & Math, Div Appl Phys, Sheffield S1 1WB, S Yorkshire, England

[2] Univ Salford, Salford M5 4WT, Lancs, England

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2005年 / 86卷 / 03期

关键词：

fermi level pinning; metal/CdTe interfaces; CdTe solar cells; Cu(InGa)(SeS)(2) solar cells; stability of solar cells;

D O I：

10.1016/j.solmat.2004.08.009

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This communication analyses some of the results observed for metal/n-CdTe interfaces in the mid-1980s, which could not be interpreted at that time. These observations are analysed on the basis of new understanding using a new model proposed for CdS/CdTe thin film solar cells. The observed behaviour of current voltage characteristics of electrical contacts to n-CdTe under electrical and illumination stresses are explained and the effects of these changes on CdS/CdTe solar cells are discussed. Future research directions for the development of CdS/ CdTe solar cells are proposed and the way forward for improvement of stability and lifetime of solar cells is suggested. A summary of recent electrical contact work on metal/ Cu(InGa)(SSe)(2) interfaces is also presented and similar behaviour is reported. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：373 / 384

页数：12

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