A 50GHz feedback amplifier with AlInAs/GaInAs transferred-substrate HBT

被引：6

作者：

Agarwal, B ^{[1
]}

Mensa, D ^{[1
]}

Lee, Q ^{[1
]}

Pullela, R ^{[1
]}

Guthrie, J ^{[1
]}

Samoska, L ^{[1
]}

Rodwell, MJW ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650489

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Transferred-substrate heterojunction bipolar transistors (HBTs) have very high f(max) and are potential candidates for very high-speed integrated circuit applications. We report a wideband amplifier with AlInAs/GaInAs transferred-substrate HBTs. A simple Darlington configuration with resistive feedback is used and has 13 dB gain, 50 GHz 3-dB bandwidth. This is the first demonstration of a integrated circuit in the transferred-substrate HBT process.

引用

页码：743 / 746

页数：4