Interfacial reaction during the epitaxial growth of yttrium on CaF2(111)

被引：6

作者：

Borgschulte, A ^{[1
]}

Weber, S ^{[1
]}

Schoenes, J ^{[1
]}

机构：

[1] Tech Univ Carolo Wilhelmina Braunschweig, Inst Halbleiterphys & Opt, D-38106 Braunschweig, Germany

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 17期

关键词：

D O I：

10.1063/1.1569998

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By means of Auger electron spectroscopy and in situ reflection high-energy electron diffraction (RHEED) the interfacial reaction during the epitaxial growth of yttrium on CaF2(111) has been studied. The RHEED patterns confirm a smooth Volmer-Weber growth mode. Auger electron spectroscopy evidences a strong interdiffusion of the film and substrate, leading to a compressive in-plane strain of the growing film. Using RHEED, we can follow the strain relaxation via misfit glides during growth. The development and crystalline orientation of the glides are characterized. (C) 2003 American Institute of Physics.

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页码：2898 / 2900

页数：3

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