On-state breakdown in power HEMTs: Measurements and modeling

被引：10

作者：

Somerville, MH ^{[1
]}

Blanchard, R ^{[1
]}

del Alamo, JA ^{[1
]}

Duh, G ^{[1
]}

Chao, PC ^{[1
]}

机构：

[1] MIT, Cambridge, MA 02139 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650446

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new definition of and measurement technique for on-state breakdown in high electron mobility transistors (HEMTs) is presented. The new gate current extraction technique is unambiguous, simple, and non-destructive. Using this technique in conjunction with sidegate and temperature-dependent measurements, we illuminate the different roles that thermionic field emission and impact ionization play in HEMT breakdown. This physical understanding allows the creation of a phenomenological model for breakdown, and demonstrates that depending on device design, either on-state or off-state breakdown can limit maximum power.

引用

页码：553 / 556

页数：4