Structural and analytical characterization of as-grown MgB2 film sputtered on differently oriented α-Al2O3 substrate

被引：5

作者：

Moon, WJ

Kaneko, K

Toh, S

Saunders, M

Saito, A

Wang, Z

Abe, H

Naito, M

机构：

[1] Kyushu Univ, Res Lab High Voltage Electron Microscope, Higashi Ku, Fukuoka 8128581, Japan

[2] Kyushu Univ, Grad Sch Engn, Dept Mat Sci & Engn, Higashi Ku, Fukuoka 8128581, Japan

[3] Univ Western Australia, Ctr Microscopy & Microanal, Crawley, WA 6009, Australia

[4] Yamagata Univ, Dept Elect Engn, Yonezawa, Yamagata 9928510, Japan

[5] KARC CRL, Nishi Ku, Kobe, Hyogo 6512492, Japan

[6] Osaka Univ, Joining & Welding Res Inst, Ibaraki, Osaka 5670047, Japan

来源：

SUPERCONDUCTOR SCIENCE & TECHNOLOGY | 2005年 / 18卷 / 01期

关键词：

D O I：

10.1088/0953-2048/18/1/015

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Superconducting MgB2 films were prepared on differently oriented alpha-Al2O3 substrates, C- and R-planes, which yielded superconducting transition temperatures of about 28 K. The electric resistivity of the MgB2 film deposited on an R-plane substrate is 300 muOmega cm, six times larger than that on a C-plane substrate, 50 muOmega cm. To understand these differences in the electrical properties, various transmission electron microscopes were used to carry out a structural and the compositional analysis. It was shown from selected-area electron diffraction patterns that the microstructure consists of a mixture of columnar MgB2 grains and amorphous phases in the case of the R-plane specimen, while no amorphous phase was present in the case of the C-plane specimen.

引用

页码：92 / 100

页数：9

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