Extraction of the threshold voltage of MOSFETs: an overview

被引：19

作者：

Liou, JJ ^{[1
]}

Ortiz-Conde, A ^{[1
]}

Sanchez, FG ^{[1
]}

机构：

[1] Univ Cent Florida, Dept Elect & Comp Engn, Orlando, FL 32816 USA

来源：

1997 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS | 1997年

关键词：

D O I：

10.1109/HKEDM.1997.642325

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The threshold voltage is a key parameter in the silicon MOSFET design and operation. This paper gives an overview of the existing methods for extracting the threshold voltage of MOSFETs. In addition, a new extraction method is proposed and developed. Comparisons of the results extracted from the various methods based on device simulation, circuit simulation, and measurements are also presented.

引用

页码：31 / 38

页数：8